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| POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 RECTIFIER DIODE AR508LT Repetitive voltage up to Mean forward current Surge current 600 V 6000 A 55 kA TARGET SPECIFICATION lug 02 - ISSUE : 4 Symbol Characteristic Conditions Tj [C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 190 190 190 600 700 75 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I t Forward voltage Threshold voltage Forward slope resistance 180 sin ,50 Hz, Th=55C, double side cooled 180 sin ,50 Hz, Tc=85C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 4500 A 190 6000 6400 55 15125 x 1E3 190 190 190 0.88 0.70 0.040 A A kA As V V mohm F (AV) FSM I t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 190 s C A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled Case to heatsink, double side cooled 17 5 -30 / 20.0 150 190 / 22.0 C/kW C/kW C kN g ORDERING INFORMATION : AR508LT S 06 standard specification VRRM/100 AR508LT RECTIFIER DIODE TARGET SPECIFICATION lug 02 - ISSUE : 4 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE Th [C] 190 170 150 130 110 90 70 50 0 2000 4000 6000 8000 10000 IF(AV) [A] 30 60 90 120 180 DC PF(AV) [W] 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0 2000 4000 6000 8000 10000 IF(AV) [A] 30 60 90 180 120 DC AR508LT RECTIFIER DIODE TARGET SPECIFICATION lug 02 - ISSUE : 4 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SINE WAVE Th [C] 210 190 170 150 130 110 90 70 50 0 2000 4000 IF(AV) [A] 30 60 90 120 180 6000 8000 10000 PF(AV) [W] 9000 8000 7000 60 120 90 180 6000 5000 4000 3000 2000 1000 0 0 2000 4000 6000 8000 10000 IF(AV) [A] 30 AR508LT RECTIFIER DIODE TARGET SPECIFICATION lug 02 - ISSUE : 4 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FORWARD CHARACTERISTIC Tj = 190 C SURGE CHARACTERISTIC Tj = 190 C 16000 14000 12000 Forward Current [A] ITSM [kA] 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 10000 8000 6000 4000 2000 0 Forward Voltage [V] 60 50 40 30 20 10 0 1 10 n cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0.001 Zth j-h [C/kW] 0.01 0.1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. |
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